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Growth of semi-polar{11-22} GaN on r-plane patterned sapphire substrates

published_at 2015
DT12100648_Abstract.pdf
[abstract] 7.76 MB
DT12100648_FullText.pdf
[fulltext] 39.4 MB
Title
r面サファイア加工基板を用いた半極性{11-22}GaNの成長に関する研究
Growth of semi-polar{11-22} GaN on r-plane patterned sapphire substrates
Degree 博士(工学) Dissertation Number 理工博甲第648号 (2015-03-04)
Degree Grantors Yamaguchi University
[kakenhi]15501 grid.268397.1
Creators Furuya Hiroshi
Languages jpn
Resource Type doctoral thesis
Date Issued 2015
File Version Not Applicable (or Unknown)
Access Rights open access
Schools 大学院理工学研究科