Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)

Biasing technique of MOSFET for an accurate and real-time-readout radiation sensor (2017年山口大学大学院東アジア研究科客員教員研究報告)

Creators Chooyat Pongpisit

Creators Lathai Adul

Creators Ge Qi-Wei

Creators Sa-Ngiamsak Chiranut

This work reports a biasing technique of MOSFET for an accurate and real-time readout radiation measurement particularly during a radiation therapy given to cancer-related patients. The radiation beam energy induces a variation of threshold voltage (V_TH) of MOSFET during being exposed to gamma radiation. V_TH measurement of five different types of MOSFET were carried out in three methods by using OrCAD and MATLAB. The simulation results conclude that Method III is the most suitable one with high accuracy and ability to read out signal in real time process. Further use of this work is a prototype of a real- time readout radiation measurement using MOSFETs with low cost and high accuracy for patients diagnosed with cancer.

[ISSN]1347-9415

[NCID]AA11831154