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Si concentration dependence of structural inhomogeneities in Si-doped Al_xGa_1-_xN/Al_yGa_1-_yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency

Journal of applied physics Volume 116 Issue 23 Page 235703-1-235703-6
published_at 2014
2015010094.pdf
[fulltext] 1.53 MB
Title
Si concentration dependence of structural inhomogeneities in Si-doped Al_xGa_1-_xN/Al_yGa_1-_yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency
Creators Kurai Satoshi
Creators Anai Koji
Creators Miyake Hideto
Creators Hiramatsu Kazumasa
Creators Yamada Yoichi
Source Identifiers [PISSN] 0021-8979 [NCID] AA00693547
Languages eng
Resource Type journal article
Publishers American Institute of Physics
Date Issued 2014
File Version Version of Record
Access Rights open access
Relations
10.1063/1.4904847
[isVersionOf] [URI]http://scitation.aip.org/content/aip/journal/jap
Schools 大学院理工学研究科(工学)