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Self-separation of large freestanding semipolar (11-22) GaN films using r-plane patterned sapphire substrates

Japanese Journal of Applied Physics Volume 52 Issue 8S Page 08JA09-
published_at 2013-08
Title
Self-separation of large freestanding semipolar (11-22) GaN films using r-plane patterned sapphire substrates
Creators Furuya Hiroshi
Creators Yamane Keisuke
Creators Okada Narihito
Creators Tadatomo Kazuyuki
Languages eng
Resource Type journal article
Publishers Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Date Issued 2013-08
Access Rights metadata only access
Relations
[ISSN]0021-4922
[ISSN]1347-4065
[NCID]AA12295836
info:doi/10.7567/JJAP.52.08JA09
[isVersionOf] [URI]http://iopscience.iop.org/1347-4065/
Schools 大学院理工学研究科(工学)