Cathodoluminescence study of optical inhomogeneity in si-doped algan epitaxial layers grown by low-pressure metalorganic vapor-phase epitaxy
Japanese Journal of Applied Physics Volume 52 Issue 8S
Page 08JL07-
published_at 2013-08
Title
Cathodoluminescence study of optical inhomogeneity in si-doped algan epitaxial layers grown by low-pressure metalorganic vapor-phase epitaxy
Languages
eng
Resource Type
journal article
Publishers
Japan Society of Applied Physics through the Institute of Pure and Applied Physics
Date Issued
2013-08
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0021-4922
[ISSN]1347-4065
[NCID]AA12295836
[isVersionOf]
[URI]http://iopscience.iop.org/1347-4065/
Schools
大学院理工学研究科（工学）