コンテンツメニュー

Epitaxy Part B. Epitaxial growth of GaN on Ppatterned sapphire substrates

Topics in applied physics Volume 126 Page 59-81
published_at 2013
Title
Epitaxy Part B. Epitaxial growth of GaN on Ppatterned sapphire substrates
Creators Tadatomo Kazuyuki
Languages eng
Resource Type journal article
Publishers Springer
Date Issued 2013
Access Rights metadata only access
Relations
[ISSN]0303-4216
[NCID]AA00864151
info:doi/10.1007/978-94-007-5863-6_4
[isVersionOf] [URI]http://link.springer.com/bookseries/560
Schools 大学院理工学研究科(工学)