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Temperature variation of non-radiative recombination rate in a-Si : H films

Physica status solidi. C, Current topics in solid state physics : PSS Volume 9 Issue 12 Page 2574-2577
published_at 2012-12
Title
Temperature variation of non-radiative recombination rate in a-Si : H films
Creators Ogihara Chisato
Creators Morigaki Kazuo
Creator Keywords
amorphous silicon defects recombination light-induced effects
Languages eng
Resource Type journal article
Publishers Wiley-VCH Verlag GmbH & Co. KGaA
Date Issued 2012-12
File Version Not Applicable (or Unknown)
Access Rights metadata only access
Relations
[ISSN]1862-6351
[NCID]AA12375141
info:doi/10.1002/pssc.201200199
[isVersionOf] [URI]http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1610-1642a
Schools 大学院理工学研究科(工学)