Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy
Applied physics express Volume 5 Issue 9
Page 095503-
published_at 2012-09
Title
Reduction in dislocation density of semipolar GaN layers on patterned sapphire substrates by hydride vapor phase epitaxy
Creators
Ueno Motohisa
Creators
Uchida Katsumi
Creators
Furuya Hiroshi
Languages
eng
Resource Type
journal article
Publishers
Japan Society of Applied Physics through Institute of Pure and Applied Physics
Date Issued
2012-09
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]1882-0778
[NCID]AA12295133
[isVersionOf]
[URI]http://apex.jsap.jp/
Schools
大学院理工学研究科（工学）