Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration
Journal of applied physics Volume 112 Issue 3
Page 033512-
published_at 2012-08
Title
Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration
Creators
Shimomura Kazuhide
Creators
Murotani Hideaki
Creators
Miyake Hideto
Creators
Hiramatsu Kazumasa
Languages
eng
Resource Type
journal article
Publishers
American Institute of Physics
Date Issued
2012-08
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0021-8979
[ISSN]1089-7550
[NCID]AA00693547
[NCID]AA11868165
[isVersionOf]
[URI]http://scitation.aip.org/japo/
Schools
大学院理工学研究科（工学）