Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
Applied physics letters Volume 101 Issue 4
Page 042110-
published_at 2012-07-23
Title
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
Creators
Murotani Hideaki
Creators
Akase Daiki
Creators
Anai Koji
Creators
Miyake Hideto
Creators
Hiramatsu Kazumasa
Languages
eng
Resource Type
journal article
Publishers
American Institute of Physics
Date Issued
2012-07-23
File Version
Not Applicable (or Unknown)
Access Rights
metadata only access
Relations
[ISSN]0003-6951
[ISSN]1077-3118
[NCID]AA00543431
[NCID]AA11868096
[isVersionOf]
[URI]http://apl.aip.org/
Schools
大学院理工学研究科（工学）