Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
Japanese journal of applied physics. Pt. 1, Regular papers & short notes Volume 29 Issue 8
Page 1435-1436
published_at 1990
Title
Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
Creators
Iwai Sohachi
Creators
Iimura Yasufumi
Creators
Aoyagi Yoshinobu
Creators
Namba Susumu
Creator Keywords
Raman scattering
stomic layer epitaxy
MOVPE
gallium arsenide
aluminum gallium arsenide
Raman spectra were measured at 300 K to characterize GaAs and AlGaAs layers grown by laser atomic layer epitaxy. The quality of the GaAs patterned layer grown by laser scanning was uniform in spite of the laser intensity profile. The molar fraction of Al in the peripheral region of the AlGaAs layer is affected by the intensity profile of the laser beam.
Languages
eng
Resource Type
journal article
Publishers
応用物理学会
Date Issued
1990
File Version
Author’s Original
Access Rights
open access
Relations
[ISSN]0021-4922
[NCID]AA10457675
[isVersionOf]
[URI]http://www.ipap.jp/jjap/index.htm
Schools
大学院理工学研究科（工学）