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Carrier dynamics in GaAs/Ga_<1-x>AlxAs quantum well

レーザー科学研究 Volume 6 Page 145-148
published_at 1984
2008010001.pdf
[fulltext] 279 KB
Title
GaAs/Ga_<1-x>AlxAs 量子井戸での担体のダイナミクス
Carrier dynamics in GaAs/Ga_<1-x>AlxAs quantum well
Creators Miyoshi Tadaki
Creators Aoyagi Yoshinobu
Creators Segawa Yusaburo
Creators Namba Susumu
Creators Nunoshita Masahiro
Time characteristics of luminescence from quantum well have been examined using time-correlated single photon counting method. The decay time of the luminescence from single quantum well is shorter than that of bulk samples. The rapid decay is considered to reflect the enhancement of recombination due to localization of carriers. The decay time of the luminescence from multi quantum well is longer than that of the single quantum well and depends on wavelength. This dependence is explained by assuming the well size fluctuation.
Languages jpn
Resource Type journal article
Publishers 理化学研究所
Date Issued 1984
File Version Version of Record
Access Rights open access
Relations
[ISSN]0289-8411
[NCID]AN0035159X
Schools 大学院理工学研究科(工学)